Advanced Si-based Semiconductors for Energy and Photonic Applications
J. Kouvetakis, Jose Menendez, John Tolle |
p77 |
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Si Wafer Bonding: Structural Features of the Interface
V.I. Vdovin, N.D. Zakharov, Eckhard Pippel, P. Werner, M.G. Milvidskii, M. Ries, M. Seacrist, Robert J. Falster |
p85 |
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Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik |
p91 |
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Growth of Heavily Phosphorus-Doped (111) Silicon Crystals
Feng Liu, Huan Peng Han, Yi Meng Wang, Li Ying Tong |
p95 |
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Semi-Insulating Silicon for Microwave Devices
Douglas M. Jordan, Kanad Mallik, Robert J. Falster, Peter R. Wilshaw |
p101 |
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Can Impurities be Beneficial to Photovoltaics?
Antonio Luque, Antonio Martà |
p107 |
|
Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors
Vladimir V. Voronkov, G.I. Voronkova, A.V. Batunina, V.N. Golovina, Robert J. Falster, M. Cornara, N.B. Tiurina, A.S. Guliaeva |
p115 |
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The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures
A. Andrianakis, Charalamos A. Londos, Andrzej Misiuk, Valentin V. Emtsev, Gagik A. Oganesyan, H. Ohyama |
p123 |
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Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
L.I. Murin, Bengt G. Svensson, J. Lennart Lindström, Vladimir P. Markevich, Charalamos A. Londos |
p129 |
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Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals
Hiroshi Yamada-Kaneta, Hajime Watanabe, Yuta Nagai, Shotaro Baba, Mitsuhiro Akatsu, Yuichi Nemoto, Terutaka Goto |
p135 |
