Vacancy Clusters in Germanium
Anthony R. Peaker, Vladimir P. Markevich, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, Eddy Simoen, I. Capan, B. Pivac, R. Jačimović |
p125 |
|
Formation of Hydrogen-Related Shallow Donors in Ge1-xSix Crystals Implanted with Protons
Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, Vladimir P. Markevich, Nikolay V. Abrosimov, Anthony R. Peaker |
p131 |
|
Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov |
p137 |
|
SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer
Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov |
p143 |
|
Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium
Eugenijus Gaubas, Jan Vanhellemont |
p149 |
|
Impact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon
M.V. Trushin, O.F. Vyvenko, Michael Seibt |
p155 |
|
Oxygen Dimers and Related Defects in Plastically Deformed Silicon
Nikolai Yarykin |
p161 |
|
Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
Lukas Válek, Jan Šik, David Lysáček |
p167 |
|
Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
Vitaly V. Kveder, Valeri I. Orlov, M. Khorosheva, Michael Seibt |
p175 |
|
Detection of Nickel in Silicon by Recombination Lifetime Measurements
Hele Savin, Marko Yli-Koski, Antti Haarahiltunen, H. Talvitie, Juha Sinkkonen |
p183 |
