The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon
John D. Murphy, A. Giannattasio, Charles R. Alpass, Semih Senkader, Robert J. Falster, Peter R. Wilshaw |
p139 |
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Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon
P.D. Edmondson, S.E. Donnelly, R.C. Birtcher |
p145 |
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Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon
O.F. Vyvenko, Martin Kittler, Winfried Seifert |
p151 |
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FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
V.D. Akhmetov, Andrzej Misiuk, Hans Richter |
p157 |
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Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan |
p163 |
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Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
Jadwiga Bak-Misiuk, Andrzej Misiuk, Barbara Surma, Artem Shalimov, Charalamos A. Londos |
p169 |
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Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
A. Carvalho, R. Jones, João A.P. Coutinho, Vitor J.B. Torres, Patrick R. Briddon |
p175 |
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"New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi |
p181 |
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Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich |
p187 |
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A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
Sandrine Brochard, Julien Godet, Laurent Pizzagalli, Pierre Beauchamp, José Soler |
p193 |
