Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe
M. Mamor, F. Danie Auret, S.A. Goodman |
p161 |
|
Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si
R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.J.L. Gossmann, C.S. Rafferty |
p177 |
|
Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si
G. Amarendra |
p189 |
|
Modelling Cu Diffusion into a Ta Barrier
Chun Li Liu |
p219 |
|
Transmission Electron Microscopy of the Configuration of Cracks and the Defect Structure near to Cracks in Si
Hiroyasu Saka, Suprijadi |
p225 |
|
Study of the Localized Modes in ZnSe:P for the Elucidation of Site Symmetry
N. Sankar, K. Ramachandran |
p247 |
|
EBIC/XPS Study of Antimony Equilibrium Segregation at the Germanium Surface
N. Tabet |
p259 |
