Silicon Wafer Requirements for ULSI Device Processing
Francesca Illuzzi |
p1 |
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Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing
Robert J. Falster |
p9 |
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On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals
Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf |
p17 |
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Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka |
p25 |
|
The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions
Kazutaka Terashima, Hajime Noguchi |
p35 |
|
Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth
V.V. Kalaev, V.A. Zabelin, Yuri N. Makarov |
p41 |
|
Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu |
p49 |
|
Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt G. Svensson |
p57 |
|
Infrared Absorption Analysis of Nitrogen in Czochralski Silicon
Y. Yamanaka, Hiroshi Harada, K. Tanahashi, T. Mikayama, N. Inoue |
p63 |
|
Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers
A. Karoui, F.S. Karoui, De Ren Yang, George A. Rozgonyi |
p69 |
