Hydrogen Interaction with Transition Metals in Silicon, Studied by Electron Paramagnetic Resonance
P.T. Huy, C.A.J. Ammerlaan |
p133 |
|
Raman Spectroscopic Analysis of Hydrogen Plasma Treated Czochralski Silicon
Reinhart Job, Alexander G. Ulyashin, Wolfgang R. Fahrner |
p139 |
|
Nitrogen Effect on Hydrogen Penetration into Cz Si during Wet Chemical Etching
A.L. Parakhonsky, Eugene B. Yakimov, De Ren Yang |
p145 |
|
Hydrogen-Related Defects in High-Resistivity Silicon
O.A. Soltanovich, Olga V. Feklisova, Eugene B. Yakimov |
p150 |
|
Infra Red Absorption by Hydrogen-Passivated Cracks in Silicon
D.V. Kilanov, L.N. Safronov, V.P. Popov |
p155 |
|
Atomistic Study of Boron Clustering in Silicon
Paola Alippi, Paolo Ruggerone, Luciano Colombo |
p163 |
|
Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
Antonino La Magna, Salvatore Coffa, Sebania Libertino, Matthias Strobel, Luciano Colombo |
p171 |
|
Dependence of the Transient Enhanced Diffusion, of B in Si, upon B Concentration and Ion Implanted Dose
Sandro Solmi, G. Mannino, Marco Servidori, M. Bersani, L. Mancini, S. Milita, Vittorio Privitera, M. Anderle |
p177 |
|
Interstitial Diffusion Influence upon Two-Dimensional Boron Profiles
Filippo Giannazzo, Vito Raineri, Vittorio Privitera, F. Priolo |
p183 |
|
Incorporation, Diffusion and Agglomeration of Carbon in Silicon
P. Lavéant, P. Werner, G. Gerth, U.M. Gösele |
p189 |
