Iron Bulk Concentration Effect on the Yield & Reliability of Thin Oxides
Kah Keen Lai, Chee Kong Leong, Hwee Ling Yeo |
p127 |
|
Gap States at the Interface of Ultra-Thin Oxide and Organic Films on Si(100)
T. Bitzer, T. Rada, N.V. Richardson, T. Dittrich, F. Koch |
p131 |
|
Modification of Low-K SiCOH Film Porosity by a HF Solution
Denis Shamiryan, Mikhail R. Baklanov, Guy Vereecke, Serge Vanhaelemeersch, Karen Maex |
p135 |
|
Layer-By-Layer Oxidation of Silicon
Takeshi Hattori, Kazuhiko Takahashi, H. Nohira, Tadahiro Ohmi |
p139 |
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The Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic Characterization
J. Eng, R.L. Opila, J.M. Rosamilia, B.J. Sapjeta, Y.J. Chabal, T. Boone, R. Masaitis, Thomas Sorsch, Martin L. Green |
p145 |
|
Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2
Seiichi Miyazaki, Kazuhiro Morino, Masataka Hirose |
p149 |
|
The Origins of Fluorine in Dry Ultrathin Silicon Oxides
Guy Vereecke, Erika Röhr, R.J. Carter, Thierry Conard, H. De Witte, Marc M. Heyns |
p153 |
|
Structural and Electrical Characterization of Ultra-Thin SiO2 Films Prepared by Catalytic Oxidation Method
Akira Izumi, Manabu Kudo, Hideki Matsumura |
p157 |
|
Characterization of DI Water/O3 Oxidation of Si (100) and Si (111) Surfaces by OCP Measurements
Harald Okorn-Schmidt, C. D'Emic, R. Murphy |
p161 |
|
Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics
Joong S. Jeon, Bob Ogle |
p165 |
