Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
C.C. Ling, C.D. Beling, M. Gong, X.D. Chen, S. Fung |
p1 |
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Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon
Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama |
p25 |
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Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
A.P. Knights, Paul G. Coleman |
p41 |
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Diffusion Processes in Strained Silicon Germanium Island Structures
T. Walther |
p53 |
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Damage in III-V Semiconductors from very Low-Energy Process Plasmas
Mahfuzur Rahman |
p61 |
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Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates
Y. Takano, Shunro Fuke |
p77 |
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Point Defects in III-V Compound Semiconductors
N. Chen |
p85 |
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On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
R. Koch, B. Wassermann, G. Wedler |
p95 |
|
Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction
N. Mainzer, E. Zolotoyabko |
p103 |
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Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching
F. Frost, G. Lippold, A. Schindler, F. Bigl |
p127 |
