Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors
J. Wu, F. Lin |
p147 |
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Diffusion of Zinc in InP, InAsP and InGaAs by the Metal-Organic Vapor-Phase Diffusion Technique
M. Wada, K. Sakakibara, T. Umezawa, S. Nakajima, S. Araki, T. Kudou, T. Ueda |
p153 |
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Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon
J. Wong-Leung, S. Fatima, C. Jagadish, J.D. FitzGerald |
p163 |
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Diffusion and Electrical Properties of Nickel in Silicon
S. Tanaka, Tetsuo Ikari, H. Kitagawa |
p171 |
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XPEEM Study of Liquid Au-Si Droplets on Si(111) near to the Eutectic Point
B. Ressel, S. Heun, T. Schmidt, K.C. Prince |
p181 |
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Effect of Surface Proximity upon Point Defects in Silicon
V. Krishnamoorthy, M. Puga Lambers, Kevin S. Jones |
p189 |
|
Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion
Fuccio Cristiano, B. Colombeau, A. Claverie |
p199 |
|
Study of Diffusion and Defects by Medium-Energy Coaxial Impact-Collision Ion Scattering Spectroscopy
Takayuki Kobayashi, C.F. McConville, J. Nakamura, G. Dorenbos, H. Sone, T. Katayama, M. Aono |
p207 |
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Transmission Electron Microscopic Study of Intersecting Stacking Faults in ZnSe/GaAs(001) Epilayers and (SiGe)/Si(001) Multilayers
K.K. Fung, Ning Wang |
p215 |
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Analytical In-Diffusion Profiles of Dopants in Semiconductors
E. Antoncik |
p231 |
