| ISBN-13: | 978-3-908450-48-1 |
|---|---|
| Year: | 1999 |
| Title: | Defects and Diffusion in II-VI Compounds [online] |
| Subtitle: | A 10-Year Retrospective |
| Authors/Editors: | D.J. Fisher |
| Published in: |
Defect and Diffusion Forum, Volumes 173 - 174
|
| Category: | |
| Pages: | 380 |
| Edition: | softcover |
| Description: | This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT. The other papers discuss the topics of dislocations in molecular beam epitaxial ZnSe layers on GaAs(001), the interdiffusion of Mn and Mg in CdTe-based quantum wells - again reflecting the importance of the (Cd,Hg)Te system, and the transmission electron microscopic study of dislocations in ZnTe/GaAs epitaxial heterostructures. The general subject of grain-boundary diffusion is treated in two papers which consider the grain boundary to be a 3-dimensional structure, rather than adopting the traditional view of its being a merely 2-dimensional interface. Although the specific system analyzed experimentally here is metallic, rather than semiconducting, this innovative approach is very likely to be relevant to the boundaries between semiconductors; with their relatively complex structures. |
| TOC: | Table of Contents |
| Prices: | USD: 243.00 / EUR: 176.00 |
