Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond
A.P. Mozer |
p1 |
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Self-Assembling Si/SiGe Nanostructures for Light Emitters
K. Eberl, O.G. Schmidt, O. Kienzle, F. Ernst |
p13 |
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The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics
E.A. Steinman, Vitaly V. Kveder, V.I. Vdovin, Hermann G. Grimmeiss |
p23 |
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Acoustically Driven Optical Parameters in Ⅱ-Ⅵ Photonic Materials
I.V. Ostrovskii, O.A. Korotchenkov |
p33 |
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Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures
Arne Nylandsted Larsen |
p43 |
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Status, Hopes and Limitations for the Si: Er-based 1.54 μm Emitter
W. Jantsch, S. Lanzerstorfer, Margarita Stepikhova, H. Preier, L. Palmetshofer |
p53 |
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Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers
Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, S. Sadamitsu, Eiichi Asayama, T. Ono, Y. Koike, H. Katahama |
p63 |
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Grown-in Defects in High Temperature Annealed Si Wafers
N. Tsuchiya, Hideyoshi Matsushita, J. Sugamoto, Akira Kawasaki, Hiroshi Kubota |
p73 |
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Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'
F.A. Reboredo, Sokrates T. Pantelides |
p83 |
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Relaxation of Misfit Induced Strain in Si-Based Heterostructures
S.H. Christiansen, Horst P. Strunk, H. Wawra, M. Becker, M. Albrecht |
p93 |
