Interaction between Point Defects and Dislocations in SiGe
Klara Lyutovich, F. Ernst, Erich Kasper, Monika Bauer, Michael Oehme |
p179 |
|
Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers
Edouard V. Monakhov, Andrej Yu. Kuznetsov, H.H. Radamson, Bengt G. Svensson |
p185 |
|
ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
N. Sandersfeld, W. Jantsch, Zbysław Wilamowski, Friedrich Schäffler |
p191 |
|
Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
De Ren Yang, Jie Zhang, L. Li, Duan Lin Que |
p197 |
|
X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices
P. Zaumseil, H. Rücker |
p203 |
|
Radiation Defects Formation in Si
Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, M. Höhne, W. Schröder |
p209 |
|
Oxygen and Peculiarities of its Precipitation in Si
Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, M. Höhne, W. Schröder |
p215 |
|
The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness
L.K. Orlov, A.V. Potapov, S.V. Ivin |
p221 |
|
Vacancy-Gettering in Silicon: Cavities and Helium-Implantation
F. Corni, R. Tonini, S. Frabboni, C. Nobili, G. Calzolari, S. Masetti, P. Tamarozzi, Giuseppe Pavia, G.F. Cerofolini |
p229 |
|
Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
Reinhard Kögler, A. Peeva, W. Anwand, P. Werner, A.B. Danilin, Wolfgang Skorupa |
p235 |
