Theory of Reaction-Diffusion Processes at Very High Dopant Concentrations
E. Antoncik
|
p183 |
Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy
Anders Hallén, N. Keskitalo, Bengt G. Svensson
|
p193 |
Analytical Expressions for the Length of Stacking Faults during Thermal Nitridation of Oxidized Silicon and Silicon
N.K. Chen, K.C. Yu, C. Lee
|
p205 |