Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
P. Moens, W. Dobbelaere, T. Colpaert |
p149 |
|
Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
Eugenijus Gaubas, Jan Vanhellemont, Eddy Simoen, C. Claeys, Winfried Seifert |
p155 |
|
Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection
I.V. Antonova, Andrzej Misiuk, V.P. Popov, A.E. Plotnikov, Barbara Surma |
p161 |
|
Initial Stage of Oxygen Precipitation in Silicon
A. Kornylo, A. Maksymov, M. Pashkovski, I. Savytskii |
p167 |
|
Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon
T.M. Tkacheva, G.N. Petrov, K.L. Enisherlova, T.F. Rusak |
p171 |
|
Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres
Yu. Blums, Arthur Medvid |
p177 |
|
Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov |
p183 |
|
Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation
Alexander G. Ulyashin, Yu.A. Bumay, Reinhart Job, G. Grabosch, D. Borchert, Wolfgang R. Fahrner, A.Yu. Diduk |
p189 |
|
Erbium in Silicon: Problems and Challenges
Simona Binetti, M. Donghi, Sergio Pizzini, Antonio Castaldini, Anna Cavallini, B. Fraboni, N.A. Sobolev |
p197 |
|
Thermal Donors in Silicon Doped with Erbium
Valentin V. Emtsev, N.A. Sobolev, Boris A. Andreev, D.S. Poloskin, Elena I. Shek |
p207 |
