Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation
F. Gaiseanu |
p223 |
|
Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
Jan Vanhellemont, G. Kissinger, Paul Clauws, A. Kaniava, M. Libezny, Eugenijus Gaubas, Eddy Simoen, Hans Richter, C. Claeys |
p229 |
|
Point Defects in Semiconductors - Then and Now
Sokrates T. Pantelides |
p237 |
|
Oxygen Aggregation Phenomena in Silicon
R.C. Newman, M.J. Binns, Charalamos A. Londos, S.A. McQuaid, J.H. Tucker |
p247 |
|
New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics
Valentin V. Emtsev, Gagik A. Oganesyan, K. Schmalz |
p259 |
|
Hydrogen Passivation of Double Donors in Silicon
Yu.V. Martynov, I.S. Zevenbergen, T. Gregorkiewicz, C.A.J. Ammerlaan |
p267 |
|
Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si
Eugene B. Yakimov, Isabelle Périchaud, Santo Martinuzzi |
p275 |
|
New Infrared Bands in Neutron-Irradiated Si
Charalamos A. Londos, G.I. Georgiou, L.G. Fytros, N. Sarlis |
p281 |
|
Iron Group Impurities in Semiconducting Iron Disilicide
K. Irmscher, W. Gelhoff, Y. Tomm, H. Lange |
p287 |
|
Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study
J. Juda, M. Höhne |
p293 |
