Persistent Photoconductivity in Hydrogenated Amorphous Silicon
C. Lee |
p475 |
|
Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?
G. Weigelt, Martin Hundhausen, Lothar Ley |
p495 |
|
Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors
R. Brüggemann |
p505 |
|
Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products
N. Wyrsch, N. Beck, P. Pipoz, M. Goerlitzer, Haine Beck, A. Shah |
p525 |
|
Electronic DC Transport in a-Si:H
Harald Overhof |
p535 |
|
Properties of Hot Carriers in a-Si:H in Comparison to a-Se
G. Juska, K. Arlauskas |
p551 |
|
Short Range Order and Atomic Charge Distribution in Amorphous Silicon
S. Kugler |
p559 |
|
Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
H. Herremans |
p573 |
|
Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
J.P. Kleider, C. Longeaud |
p597 |
|
Determinaton of Localized-State Distributions from Transient Photoconductivity Data
H. Naito |
p647 |
