An Attempt to Simulate Oxygen Precipitation in Silicon
M. Macek |
p165 |
|
Defect Formation in Dislocation-Free Silicon Containing Oxygen
M.G. Mil'vidskii, Vladimir V. Voronkov, V.J. Reznik |
p171 |
|
Influence of Preannealing on Oxygen Precipitation
S. Nouredin, T. Kormàny |
p173 |
|
Silicon Intrinsic Gettering Durability and Effectiveness
D. Sachelarie, A. Badoiu, G. Gradinaru, M. Stoica, M. Sachelarie, V. Vivsencu |
p179 |
|
Effect of Heat Treatment on Defect Formation in Silicon
N.A. Sobolev, Yu.V. Vyzhigin, V.V. Eliseev, V.A. Kostylev, V.M. Likunova, E.I. Sheck |
p181 |
|
Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
E. Susi |
p187 |
|
Defect Reactions in Semiconductors
Masashi Suezawa, Koji Sumino |
p197 |
|
Electronic States in Plastically Deformed Silicon
Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini |
p211 |
|
Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions
V.V. Bolotov, V.M. Emeksuzyan, V.A. Stuchinski |
p221 |
|
Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
A.L. Aseev, Liudmila I. Fedina, D. Hoehl, H. Bartsch |
p235 |
