Silicon Carbide and Related Materials 2015

Silicon Carbide and Related Materials 2015
ISBN-13:

978-3-0357-1042-7

Subtitle:

ICSCRM 2015

Authors / Editors:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Category:

Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy

Pages:

1264

Year:

2016

Periodical:

Materials Science Forum Vol. 858

Edition:

softcover

TOC:
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All papers are available online at www.scientific.net
Description:

This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.

The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.

The papers are grouped as follows:

Chapter 1: SiC Growth

Chapter 2: SiC Theory and Characterization

Chapter 3: SiC Processing

Chapter 4: SiC Devices

Chapter 5: Related Materials read more...

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