Silicon Carbide and Related Materials 2004 (Table of Contents)

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga	p93
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara	p97
Epitaxial Growth and Characterisation of Phosphorus Doped SiC Using TBP as Precursor Anne Henry, Erik Janzén	p101
Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt	p105
Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC Günter Wagner, D. Schulz, J. Doerschel	p109
CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates Ze Hong Zhang, Ying Gao, Arul Arjunan, Eugene Toupitsyn, Priyamvada Sadagopan, Robert M. Kennedy, Tangali S. Sudarshan	p113
Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates Caroline Blanc, Marcin Zielinski, Veronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil	p117
Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane C. Sartel, Veronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth	p121
Is the Al Solubility Limit in SiC Temperature Dependent or not? Christophe Jacquier, Gabriel Ferro, Marcin Zielinski, Efstathios K. Polychroniadis, A. Andreadou, Jean Camassel, Yves Monteil	p125
Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique S. Yoneda, Tomoaki Furusho, H. Takagi, S. Ohta, Shigehiro Nishino	p129

Papers of Title

Silicon Carbide and Related Materials 2004

Table of Contents (253 papers, 10 per page listed)