Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si(001) Substrate
Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta |
p3 |
|
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling
Peter J. Wellmann, Z.G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker |
p9 |
|
Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method
Shinichi Nishizawa, Yumi Michikawa, Tomohisa Kato, Fusao Hirose, Naoki Oyanagi, Kazuo Arai |
p13 |
|
On the Early Stages of Sublimation Growth of 4H-SiC Using 8° Off-Oriented Substrates
D. Schulz, M. Lechner, H. J. Rost, D. Siche, Jürgen Wollweber |
p17 |
|
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, J. Peber Bergman, Björn Magnusson, Erik Janzén |
p21 |
|
Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation
Didier Chaussende, Francis Baillet, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar |
p25 |
|
Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation
E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, S.Yu. Karpov, Yu.A. Makarov, H. Helava |
p29 |
|
HTCVD Grown Semi-Insulating SiC Substrates
Alexsandre Ellison, Björn Magnusson, Nguyen Tien Son, L. Storasta, Erik Janzén |
p33 |
|
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Stephan G. Müller, M.F. Brady, W.H. Brixius, R.C. Glass, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr. |
p39 |
|
Defects in Semi-Insulating SiC Substrates
Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén |
p45 |
