Silicon Carbide and Related Materials - 2002 (Table of Contents)

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport H. J. Rost, K. Irmscher, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber	p91
Morphological Features of Sublimation-Grown 4H-SiC Layers D. Schulz, J. Doerschel	p95
Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth Roman Drachev, Dimitri I. Cherednichenko, I.I. Khlebnikov, Yuri I. Khlebnikov, Tangali S. Sudarshan	p99
Heat Transfer Modeling of a New Crystal Growth Process Francis Baillet, Didier Chaussende, Ludovic Charpentier, Etienne Pernot, Michel Pons, Roland Madar	p103
Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution Oleg A. Agueev, Alexander M. Svetlichnyi, A.G. Klovo, A.N. Kocherov, D.A. Izotovs	p107
Crystal Interface Shape Simulation during SiC Sublimation Growth K. Böttcher, D. Schulz	p111
Growth at High Rates and Characterization of Bulk 3C-SiC Material Gabriel Ferro, Carole Balloud, Sandrine Juillaguet, Patrice Vicente, Jean Camassel, Yves Monteil	p115
Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates Ghassan Younes, Gabriel Ferro, Christophe Jacquier, Jacques Dazord, Yves Monteil	p119
SiC Epitaxy on Non-Standard Surfaces Hiroyuki Matsunami, Tsunenobu Kimoto	p125
4H-SiC Epitaxial Growth for High-Power Devices Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi	p131

Papers of Title

Silicon Carbide and Related Materials - 2002

Table of Contents (240 papers, 10 per page listed)