Silicon Carbide and Related Materials 2001 (Table of Contents)

Influence of the Crystal Thickness on the SiC PVT Growth Rate Dimitri I. Cherednichenko, Yuri I. Khlebnikov, Roman Drachev, I.I. Khlebnikov, Tangali S. Sudarshan	p95
Micropipe Formation Model via Surface Step Interaction Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro	p99
Self-Healing Phenomenon of Micropipes in Silicon Carbide Atsuto Okamoto, Yoshiki Seno, Naohiro Sugiyama, Fusao Hirose, Kazukuni Hara, Toshihiko Tani, Daisuke Nakamura, Nobuo Kamiya, Shoichi Onda	p103
A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth Naoki Oyanagi, Shinichi Nishizawa, Kazuo Arai	p107
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth Tomohisa Kato, Naoki Oyanagi, Yasuo Kitou, Shinichi Nishizawa, Kazuo Arai	p111
The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino	p115
Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino	p119
The Development of 4H-SiC {03-38} Wafers Koji Nakayama, Youichi Miyanagi, Hiromu Shiomi, Shigehiro Nishino, Tsunenobu Kimoto, Hiroyuki Matsunami	p123
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth Matthias Bickermann, Roland Weingärtner, Dieter Hofmann, Thomas L. Straubinger, Albrecht Winnacker	p127
Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Thomas L. Straubinger, Matthias Bickermann, Michael Rasp, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker	p131

Papers of Title

Silicon Carbide and Related Materials 2001

Table of Contents (371 papers, 10 per page listed)