Large Diameter, Low Defect Silicon Carbide Boule Growth
Calvin H. Carter Jr., R.C. Glass, M.F. Brady, D.P. Malta, D. Henshall, Stephan G. Müller, Valeri F. Tsvetkov, H. McD. Hobgood, Adrian R. Powell |
p3 |
|
SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
Cécile Moulin, Michel Pons, Alexander Pisch, Philippe Grosse, Christian Faure, Alain Basset, Gérard Basset, Antoine Passero, Thierry Billon, Bernard Pelissier, Mikhail Anikin, Etienne Pernot, Petra Pernot-Rejmánková, Roland Madar |
p7 |
|
Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker |
p11 |
|
Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder |
p15 |
|
Progress in 4H-SiC Bulk Growth
Mikhail Anikin, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Thierry Billon, Christian Faure, Cécile Moulin, Roland Madar |
p21 |
|
Stability Criteria for 4H-SiC Bulk Growth
Thomas L. Straubinger, Matthias Bickermann, Dieter Hofmann, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker |
p25 |
|
Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
H. J. Rost, J. Dolle, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber |
p29 |
|
Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker |
p33 |
|
Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
D.S. Karpov, O.V. Bord, S.Yu. Karpov, A.I. Zhmakin, M.S. Ramm, Yuri N. Makarov |
p37 |
|
Some Aspects of Sublimation Growth of SiC Ingots
S.F. Avramenko, V.S. Kiselev, M. Valakh, V.A. Yukhimchuk |
p41 |
