Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
Didier Chaussende, Christophe Jacquier, Gabriel Ferro, Jean Claude Viala, François Cauwet, Yves Monteil |
p85 |
|
Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
Jie Zhang, Alexsandre Ellison, Örjan Danielsson, Anne Henry, Erik Janzén |
p91 |
|
Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
Günter Wagner, K. Irmscher |
p95 |
|
Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
Örjan Danielsson, Urban Forsberg, Anne Henry, Erik Janzén |
p99 |
|
Modeling Analysis of SiC CVD in a Planetary Reactor
A.N. Vorob'ev, A.K. Semennikov, A.I. Zhmakin, Yuri N. Makarov, M. Dauelsberg, Frank Wischmeyer, M. Heuken, H. Jürgensen |
p103 |
|
Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
A.N. Vorob'ev, M.V. Bogdanov, A.E. Komissarov, S.Yu. Karpov, O.V. Bord, A.A. Lovtsus, Yuri N. Makarov |
p107 |
|
Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
C. Raffy, L. Magaud, Elisabeth Blanquet, Michel Pons, A. Pasturel |
p111 |
|
SiC Defect Density Reduction by Epitaxy on Porous Surfaces
Stephen E. Saddow, Marina G. Mynbaeva, Wolfgang J. Choyke, Robert P. Devaty, Song Bai, Galyna Melnychuck, Yaroslav Koshka, Vladimir Dmitriev, C.E.C. Wood |
p115 |
|
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
N.S. Savkina, V.V. Ratnikov, V.B. Shuman, Alexander A. Lebedev |
p119 |
|
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Shigehiro Nishino, Yasuichi Masuda, Satoru Ohshima, Chacko Jacob |
p123 |
