SiC Seeded Boule Growth
Valeri F. Tsvetkov, R.C. Glass, D. Henshall, Calvin H. Carter Jr., D. Asbury |
p3 |
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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
G. Augustine, H. McD. Hobgood, Vijay Balakrishna, Greg Dunne, R.H. Hopkins, R.N. Thomas, W.A. Doolittle, A. Rohatgi |
p9 |
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Sublimation Growth of 50mm Diameter SiC Wafers
Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes |
p13 |
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Experimental Investigation of 4H-SiC Bulk Crystal Growth
K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons |
p17 |
|
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya |
p21 |
|
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama |
p25 |
|
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
S. Milita, R. Pons, J. Baruchel, A. Mazuelas |
p29 |
|
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker |
p33 |
|
The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
V.D. Heydemann, Gregory S. Rohrer, Edward M. Sanchez, Marek Skowronski |
p37 |
|
Defect Formation Mechanism of Bulk SiC
Makato Sasaki, Y. Nishio, Shigehiro Nishino, Shinichi Nakashima, Hiroshi Harima |
p41 |
