Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Roland Rupp, A. Wiedenhofer, Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani |
p89 |
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Growth and Characterisation of SiC Power Device Material
Olof Kordina, Anne Henry, Erik Janzén |
p97 |
|
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Alexsandre Ellison, Tsunenobu Kimoto, Ivan G. Ivanov, Qamar-ul Wahab, Anne Henry, Olof Kordina, Jian Hui Zhang, Carl G. Hemmingsson, Chun-Yuan Gu, M.R. Leys, Erik Janzén |
p103 |
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Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
Olof Kordina, Kenneth G. Irvine, Joseph J. Sumakeris, H.S. Kong, Michael J. Paisley, Calvin H. Carter Jr. |
p107 |
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Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami |
p111 |
|
Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
L.B. Rowland, Albert A. Burk, C.D. Brandt |
p115 |
|
Boron Compensation of 6H Silicon Carbide
Michael S. Mazzola, Stephen E. Saddow, Adolf Schöner |
p119 |
|
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
Christer Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyen Tien Son, Erik Janzén |
p123 |
|
Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Frank Wischmeyer, D. Leidich, E. Niemann |
p127 |
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Growth of 4H and 6H SiC Trenches and Around Stripe Mesas
Nils Nordell, S. Karlsson, Andrey O. Konstantinov |
p131 |
