Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching
S.A. Goodman, F. Danie Auret, M. Mamor, Prakash N.K. Deenapanray, W.E. Meyer |
p133 |
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The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
I.A. Buyanova, W.M. Chen, G.R. Pozina, Bo Monemar, W.X. Ni, G.V. Hansson |
p139 |
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Gold-Related Levels in Relaxed Si1-xGex Alloy Layers: A Study of the Pinning Effect
A. Mesli, P. Kringhøj, Arne Nylandsted Larsen |
p145 |
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Dislocation-Related Electronic States in Strain-Relaxed Si1-xGex/Si Epitaxial Layers Grown at Low Temperature
Patricia M. Mooney, Kai Shum |
p151 |
|
Dislocation Activities in Bulk GeSi Crystals
Ichiro Yonenaga, Koji Sumino |
p159 |
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Schottky Diodes on Si1-x-yGexCy Alloys: Measurement of Band Off-Set by DLTS
M. Serpentini, G. Brémond |
p165 |
|
Molecular-Dynamics Simulations of Microscopic Defects in Silicon
Stefan Estreicher, Peter A. Fedders |
p171 |
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Comparison of Muonium (Hydrogen) Dynamics in Germanium and Silicon
R.L. Lichti, K.H. Chow, S.F.J. Cox, T.L. Estle, B. Hitti, C. Schwab |
p179 |
|
Hydrogenation and Passivation of B in Si by Boiling in Water Pressurized up to 10 ATM
Y. Ohmura, M. Libezny, M. Ohtaka, A. Kimoto, M. Yamaura |
p185 |
|
Low Temperature Hydrogen Diffusion in Silicon: Influence of Substrate Quality and the Surface Damage
M.I. Symko, Bhushan L. Sopori, Robert Reedy, Kim M. Jones |
p191 |
