Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge
Boris A. Andreev, E.B. Kozlov, T.M. Lifshits |
p121 |
|
Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As
K.M. Itoh, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, Hyun Jung Kim, A.J. Mayur, M.D. Sciacca, A.K. Ramdas, Ryszard Buczko, J.W. Farmer, V.I. Ozhogin |
p127 |
|
Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon
A.N. Safonov, Edward C. Lightowlers, Gordon Davies |
p133 |
|
Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon
L. Jeyanathan, Edward C. Lightowlers, Gordon Davies |
p139 |
|
Excitons Bound to Isoelectronic C3V-Defects B480 (1.1068 eV) in Silicon
A.S. Kaminskii, E.V. Lavrov |
p145 |
|
Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures
Peter Ehrhart, Valentin V. Emtsev, D.S. Poloskin, Holger Zillgen |
p151 |
|
Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
Y. Shi, Masashi Suezawa, Feng Mei Wu, M. Imai, Y.D. Zheng, Koji Sumino |
p157 |
|
Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
Valentin V. Emtsev, D.S. Poloskin, Elena I. Shek, N.A. Sobolev |
p163 |
|
EPR and IR Absorption of Defects in Isotopically Enriched Germanium
Lyudmila I. Khirunenko, N.A. Tripachko, V.I. Shakhovtsov, V.I. Yashnik, V.V. Shumov |
p167 |
|
NMR Study of Impurity Electronic Structure and Dynamics
W.W. Warren, S.E. Fuller, A. Göbel, U. Bindley, J.K. Furdyna |
p173 |
