A Summary of the Passivity Symposium
H.L. Hartnagel, W.J. Plieth |
p3 |
|
Fundamental Aspects of the Passivation of Metals and Semiconductors
K.E. Heusler |
p9 |
|
Passivation and Control of Semiconductor Interfaces by Interface Control Layers
Hisashi Hasegawa |
p23 |
|
A comparison of the Oxidation and Passivation of Si, Ge and InP
E.A. Irene |
p37 |
|
Laser Interferometry and SMX-Techniques for Thermal Characterization of Thin Films
E. Oesterschulze, L. Hadjiiski, M. Stopka, R. Kassing |
p43 |
|
Determination of Interface State Density Distribution and Surface Recombination Velocity on Passivated Semiconductor Surfaces by Photoluminescence Surface State Spectroscopy
T. Saitoh, Hisashi Hasegawa |
p53 |
|
Non-Steady State C-V Methods for Determination of Interface State Parameters
K.L. Temnikov, I.A. Uritskaya |
p59 |
|
Composition, Structure and Modification of Passivating Films on Semiconductors Deposited at Low Temperatures
Mikhail R. Baklanov, L.L. Vasilyeva |
p65 |
|
Passivity and electronic properties of the silicon/silicondioxide interface
H. Flietner |
p73 |
|
Electrochemical and Electronic Passivation by Hydrogenation of n-Si(111)
J. Rappich, H.J. Lewerenz |
p83 |
