Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers
N.A. Sobolev, Valentin V. Emtsev, B.N. Gresserov, P.M. Klinger, D.S. Poloskin, E.P. Shabalin, Elena I. Shek, Yu.V. Vyzhigin |
p129 |
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Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence
H.-P. Frank, E. Diehl, K..-H. Ergezinger, Bernd Fischer, Bernd Ittermann, F. Mai, K. Marbach, S. Weißenmayer, G. Welker, H. Ackermann, H.J. Stöckmann |
p135 |
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EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon
N. Meilwes, Johann Martin Spaeth, Valentin V. Emtsev, Gagik A. Oganesyan, W. Götz, Gerhard Pensl |
p141 |
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Role of Point Defects in Oxygen Agglomeration in Si
Michio Tajima, Hiroshi Takeno, M. Warashina, Takao Abe |
p147 |
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DLTS Studies of Thermally Treated Carbon-Rich Silicon
N.B. Urli, V. Borjanović |
p153 |
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A Metastable Selenium-Related Center in Silicon
Anne Henry, E. Sörman, Sven Andersson, W.M. Chen, Bo Monemar, Erik Janzén |
p159 |
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The Excited 5T1 State of the Feio -Center in Silicon
A. Thilderkvist, G. Grossmann, Mats Kleverman, Hermann G. Grimmeiss |
p165 |
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Identification of the Iron-Boron Line Spectrum in Silicon
S. Ghatnekar-Nilsson, Mats Kleverman, P. Emanuelsson, Hermann G. Grimmeiss |
p171 |
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Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon
H. Weihrich, Harald Overhof |
p177 |
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On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si
Ryszard Iwanowski, B.J. Kowalski, B.A. Orłowski, Jadwiga Bak-Misiuk |
p183 |
