| ISBN-13: | 978-0-87849-666-2 |
|---|---|
| Year: | 1993 |
| Title: | Defects in Semiconductors I [online] |
| Authors/Editors: | Nickolay T. Bagraev |
| Published in: |
Defect and Diffusion Forum, Volumes 103 - 105
|
| Category: | Proceedings of the 1st National Conference on Defects in Semiconductors (NCDS-1), St. Petersburg, Russia, April 1992 |
| Pages: | 691 |
| Edition: | |
| Description: | This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors. An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques. I. Defects in III-V Compounds. II. Metastability. III. Defects in II-VI Compounds. IV. Diffusion. V. Defects in Silicon, Germanium and Si-Ge Alloys. VI. Negative-U Properties for Defects in Semiconductors. VII. Defects in IV-VI Compounds. VIII. Disloctions. IX. Thermal Donors in Silicon. X. Theory. XI. Defects in SiC . |
| TOC: | Table of Contents |
| Prices: | USD: 391.00 / EUR: 283.00 |
