The Structure of a Metastable Luminescent Defect in Sulphur-Doped Silicon
M. Singh, Gordon Davies, Edward C. Lightowlers, G.D. Watkins |
p141 |
|
Iron-, Manganese- and Chromium-Indium Pairs in Silicon
U. Reislöhner, S. Schwarz, W. Witthuhn |
p147 |
|
Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition
Koji Gotoh, J. Murota, S. Ono |
p153 |
|
Self-Modulating Incorporation of Sb in Si/SiGe Superlattices during Molecular Beam Epitaxial Growth
K. Fujita, S. Fukatsu, N. Usami, H. Yaguchi, Y. Shiraki, R. Ito |
p159 |
|
Strong Electron-Phonon Interaction of a Hydrogen-Carbon Complex and the Motion of Isolated Hydrogen in Si
Y. Kamiura, T. Okashita, Y. Nishiyama, Fumio Hashimoto |
p165 |
|
Piezo-Magneto-Resistivity of Si-B in the Hopping Regime
M. Stöhr, P. Janiszewski, J.A. Chroboczek |
p171 |
|
Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon
J.D. Campion, K.G. McGuigan, M.O. Henry, Maria Helena Nazaré |
p177 |
|
Accurate Evaluation Techniques of the Interstitial Oxygen Concentrations in the Oxygen Precipitated and the Low-Resistivity CZ-Si Crystals
Y. Kitagawara, K. Takamizawa, Takao Takenaka |
p183 |
|
Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method
E. Iino, I. Fusegawa, H. Yamagishi |
p189 |
|
The Dynamics of the Non-Radiative Triplet State of the (V-O)0 Defect in Silicon: Evidence for a Radical Pair Mechanism
A.M. Frens, M.E. Braat, A.B. van Oosten, J. Schmidt |
p195 |
