Optical Characterization of Monolayer Islands and Interface Effects in InGaAs/InP Multiquantum Well Structures
|
p87 |
|
Photoluminescence Probing the Si Incorporation in MBE Grown AlXGa1-XAs
|
p93 |
|
Associates of Charged Defects in Gallium Arsenide: Calculation and Photoluminescence Data
|
p101 |
|
Photoluminescence of Bismuth Doped GaSb
|
p109 |
|
Optical Effects in Thin Layers
|
p117 |
|
Magnetooptical Spectroscopy of Layer Dilute Magnetic Semiconductors
|
p125 |
|
Visible Light Characterization of Sillicon on Insulator Materials
|
p133 |
|
Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
|
p141 |
|
The Origin of the M-Centre in Zinc Selenide
|
p145 |
|
Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
|
p151 |
