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Remote Plasma-Enhanced Chemical Vapor Deposition of Homoepitaxial Silicon AT 150C
S. Banerjee, A. Tasch, B. Anthony, T. Hsu, L. Breaux, R. Qian |
p7 |
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Strained Layer Epitaxy for Material Qualitiy Improvement
H. Beneking |
p21 |
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Growth Instabilities in LPE Processes: The Initial Steps of Heteroepitaxy
Yu.B. Bolkhovityanov |
p37 |
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Epitaxial Heterostructures of Semiconductor Multicomponent Solid Solutions
L.M. Dolginov, M.G. Mil'vidskii |
p54 |
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MOVPE of GaInAs/AlGaInAs Heterostructures and Quantum Wells for Optoelectronic Devices
M. Druminski |
p71 |
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Impurity Diffusion in lnGaAs-lnP Heterojunction Bipolar Transistors Grown by MOCVD
R.D. Dupuis, N.D. Gerrard, C.J. Pinzone, N.T. Ha, H.S. Luftman, C.M. Cotell |
p73 |
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On the Pecularities of the Short-Time (Tg<10 ms)Solid Solution LPE Growth onto the Moving Substrate
D.Z. Garbuzov, E.V. Zhuravkevich, A.I. Zhmakin, Yuri N. Makarov, A.V. Ovchinnikov |
p75 |
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Interfacial Ordering in Si/Ge Strained-Layer Superlattices
E. Müller, H.U. Nissen, M. Ospelt, H. von Känel |
p85 |
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Epitaxial Lateral Overgrowth of III-V Compounds for Obtaining Dislocation Free Layers
T. Nishinaga |
p92 |
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Growth of GaAs on Si: A Solution for the Site Allocation Problem
M. Pessa, H. Asonen, J. Varrio |
p100 |
