MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
V.V. Tuyen, B. Szentpáli, I. Mojzes, A. Salokatve, H. Asonen, M. Pessa |
p107 |
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Interface Symmetry and Heteroepitaxy
A.V. Andreeva |
p111 |
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MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
Ju.M. Tchekochinin, S.M. Roomyantseva, V.S. Roodnev |
p115 |
|
Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
I. Gregora, V. Vorlícek, K. Kokesová, K. Ploog |
p119 |
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Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
W. Bala, M. Kozielski, M. Drozdowski |
p123 |
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Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
W. Bala |
p127 |
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Computer Simulation of Interdiffusion Processes on II-VI Superlattices
V.A. Poteshkov, Y.M. Shchekochihin, E.B. Tsaviva |
p131 |
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MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
V.A. Markov, O.P. Pchelakov, A.B. Talochkin, V.N. Sherstyakova, V.N. Shumskiy |
p135 |
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The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in Semiconductors
A. Zehe |
p139 |
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Eu2+ and Sm2+ Ions as a Photoluminescent Probe in Epitaxial CaF2 Films on Semiconductors
S.V. Novikov, N.S. Sokolov, N.L. Yakovlev |
p151 |
