|
Empirical Relations for Tetrahedrally Coordinated Semiconductors
L. Hrivnak |
p1 |
|
Evidence for the Dislocation-Induced Deep Traps in GaAs
T. Wosiński |
p9 |
|
X-Ray Diffractometry of Very Thin LPE InGaAsP and InP Layers
|
p13 |
|
Low Temperature Photoluminescence Characterization of Acceptors in Vapour Phase Epitaxial GaAs
B. Pödör, L. Andor, A. Nemcsics, K. Somogyi, I. Gyuro |
p17 |
|
Deep Levels in Sl GaAs Crystals by Spectral Photoconductivity and Photoluminescence
J. Pastrnak |
p21 |
|
Deep Levels in GaAs1-XPX under High Hydrostatic Pressure
Jan Zeman, V. Smid, J. Kristofik, P. Hubik, J.J. Mares, V.Ya. Prinz, S.N. Rechkunov |
p29 |
|
Ion Beam Bombardment Induced Composition Changes at the GaAs Surface Investigated by AES
M. Procop |
p33 |
|
Photoluminescence Study of Ge-Doped GaAs Grown by Liquid-Phase Epitaxy
L. Andor, L. Csontos, Judit Pfeifer |
p37 |
|
Dopant Influence on Structure Perfection of GaAs Single Crystals
I.V. Stepantsova, V.B. Osvensky, A.V. Markov, S.S. Shifrin, U.A. Grigoriev, V.T. Bublik |
p41 |
|
Dislocation Density of Doped GaAs Single Crystals Grown by HB Method
B. Stepanek, F. Moravec, Zo.Il. Mu |
p45 |
