Carbon-Related Processes in Crystalline Silicon
Gordon Davies |
p151 |
|
Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
W. Kürner, Klaus Thonke, R. Sauer, M.T. Asom, W. Zulehner |
p159 |
|
Peculiarities of Behavior of Irradiated Heat-Treated Si
V.B. Neimash, V.M. Siratsky, Mikhail G. Sosnin, V.M. Tsmots, V.I. Shakhovtsov, V.L. Shindich, M.G. Mil'vidskii |
p165 |
|
On the Role of Point Defects in Gettering Processes
Jan Vanhellemont, C. Claeys |
p171 |
|
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
Marcel W. Hüppi |
p177 |
|
Deep Levels in Silicon as a Result of CoSi2 Formation
L.W. Lu, G. Groeseneken, L. Van den Hove, Karen Maex |
p183 |
|
Precipitation Phenomena in CMOS Technology
I. Fàbian, T. Kormàny, K. Erdélyi, E.K. Pal |
p189 |
|
Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
Erzsébet Hild, S. Nouredin, T. Kormàny |
p195 |
|
Influence of Defects on the Impurity Diffusion in SIMOX Structures
Dimitris Tsoukalas, P. Normand, N. Guillemot |
p201 |
|
Defects in High-Dose Oxygen Implanted Silicon
A. De Veirman, K. Yallup, J. Van Landuyt, H.E. Maes |
p207 |
