Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection
A. Borghesi, G. Guizzetti, L. Nosenzo |
p1 |
|
Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon
H. Jaeger |
p11 |
|
Channeling, RBS and Mössbauer Measurements on 151Eu Implanted Si
A. Bhagawat, M.B. Kurup, K.G. Prasad, R.P. Sharma |
p33 |
|
Cross-Sectional Transmission Electron Microscope Study of Bf2+-Implanted (001) and (111) Silicon
Lih Juann Chen, C.W. Nieh, Chih Hsing Chu |
p45 |
|
EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon
I.E. Bondarenko, Eugene B. Yakimov |
p59 |
|
Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation
Sandro Solmi, Marco Servidori |
p65 |
|
Electrical Characterization of Buried Layers in Silicon
Wolfgang R. Fahrner, E. Klausmann |
p85 |
|
Mechanism of Buried Oxide Formation by Implanted Oxygen
J. Stoemenos |
p115 |
|
Diffusion of Ion-Implanted Group III and V Impurities in SlO2
A.H. Van Ommen |
p133 |
|
Annealing of Implants Reduces Lattice Defects and 1/f Noise
L.K.J. Vandamme |
p153 |
