Implantation of Silicon in Indium Phosphide for Metal Insulator Semiconductor Transistors
N. Duhamel, G. Post, P. Krauz, P. Henoc, B. Descouts
|
p361 |
Thermal Annealing of Be Implanted InSb
H. Alberts, R. Cilliers
|
p371 |
Range of Various Implanted Ions in III-V Materials
Pierre-Noel Favennec, M. Gauneau, M. Salvi
|
p377 |
The Compositional Disordering of AlGaAs/GaAs Superlattices by Si and Be Ion Implantation
Jyunji Kobayashi
|
p417 |
Low-Energy Hydrogen-Ion Implantation in Zinc Oxide
G. Yaron, Y. Goldstein, A. Many
|
p429 |
Optical Properties of Hydrogen-Implanted Semiconductors
Jakub Tatarkiewicz
|
p457 |
Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions
M.G. Kalitzova, D.S. Karpuzov, N.K. Pashov
|
p465 |