Intrinsic/Internal Gettering in Czochralski Silicon Wafers
F. Shimura |
p1 |
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Defects and impurities in Multi Layer Structures on Si: The Role of Mechanical Stresses in Gettering of Defects and Impurities by Intrinsic and Extrinsic Grain Boundaries
|
p13 |
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Precipitation of Iron in Silicon: Gettering to Extended Surface Defects Sites
M.D. de Coteau, Peter R. Wilshaw, Robert J. Falster |
p27 |
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Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Assessment of Thermal Stability
Robert J. Falster, Z. Laczik, G.R. Booker, Péter Török |
p33 |
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Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling Rate
Z. Laczik, Robert J. Falster, G.R. Booker |
p39 |
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On the Role of Stacking Faults in Copper Precipitation in Silicon
Michael Seibt |
p45 |
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TEM Studies of the Gettering of Copper, Palladium and Nickel in Czochralski Silicon by Small Oxide Particles
A.R. Bhatti, Robert J. Falster, G.R. Booker |
p51 |
|
An Influence of Carbon on Intrinsic Gettering Quality and Circuit Performance
L. Tesar, J. Fojtásaek, J. Kadanka, Josef Bartoš |
p57 |
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Intrinsic Gettering in Nitrogen-Doped Cz-Si
J.S. Yang, L.B. Li, Duan Lin Que |
p65 |
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Application of Doped Polysilicon Layers in a BICMOS-Technology
G. Ritter, H.B. Erzgräber, D. Bolze |
p69 |
