|
The Preparation and Analysis of Active Layers Prepared by Si+ through Si3N4 Implantation into Sl GaAs/Cr/
L. Duricek |
p1 |
|
Vanadium-Doped Bulk and Epitaxial GaAs, Studied by Photoluminescence and Photoconductivity
P.S. Gladkov, K.B. Ozanyan |
p7 |
|
The Use of Anisotropically Etched Gallium Arsenide Surfaces in Optoelectronics
T.Ja. Gorbach, L.A. Matveeva, S.V. Svechnikov, Yu.A. Tkhorik |
p13 |
|
Real Structure of AS-Grown GaAs Crystals
R. Gleichmann, H. Menniger, H. Raidth |
p17 |
|
Growth of GaAs Epitaxial Layers at Low Temperatures
I. Gyúró, István Mészáros, K. Somogyi |
p23 |
|
Study of Selective Zinc Diffusion in InP
E. Hájková, K. Starosta, Jan Kohout |
p28 |
|
Deposition Methods for Dielectric Films
T. Jung |
p33 |
|
Distribution of Free Carrier Concentration across N-Type LEC-InP Wafers
A. Knauer, R. Sprenger, U. Zeimer |
p37 |
|
The Study of the Interface in GaAs-Ge and GaAs-Ge1-xSix Heterosystems
L.A. Matveeva, Yu.A. Tkhorik |
p41 |
|
LPE Growth of GaInAsP/InP DH
D. Nohavica, J. Těminová, D.A. Tuan, J. Kortán, J. Zelinka |
p45 |
