Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology
Shintaro Miyazawa |
p1 |
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Hot Topics: Theory
A.M. Stoneham |
p9 |
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AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors
Y. Bar-Yam, J.D. Joannopoulos |
p19 |
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Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities
C.M. Weinert, Matthias Scheffler |
p25 |
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Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods
Gary G. DeLeo, W. Beall Fowler, Geralyn W. Barry, Morgan Besson |
p31 |
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Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
Christian Delerue, G. Allan, Michel Lannoo |
p37 |
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Tight-Binding Study of the Silicon Divacancy
P. Pecheur, G. Toussaint |
p43 |
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Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe
Hélio Chacham, J. Luís Alves, M.L. de Siqueira |
p49 |
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Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
Lucy V.C. Assali, J.R. Leite |
p55 |
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Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
Hiroshi Katayama-Yoshida, N. Hamada |
p61 |
