Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
Maurizio Masi, Alessandro Veneroni, A. Fiorucci, Francesco La Via, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, Gian Luca Valente, Danilo Crippa |
p93 |
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Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
Henrik Pedersen, Anne Henry, Jawad Hassan, J. Peber Bergman, Erik Janzén |
p97 |
|
High Quality Uniform SiC Epitaxy for Power Device Applications
Jie Zhang, Esteban Romano, Janice Mazzola, Swapna G. Sunkari, Carl Hoff, Igor Sankin, Michael S. Mazzola |
p101 |
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High SiC Growth Rate Obtained by Vapour-Liquid-Solid Mechanism
N. Boutarek, Didier Chaussende, Roland Madar |
p105 |
|
Homoepitaxial Growth of 4H-SiC Multi-Epilayers and its Application to UV Detection
Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li |
p109 |
|
Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
Ho Keun Song, Han Seok Seo, Jeong Hyun Moon, Jeong Hyuk Yim, Jong Ho Lee, Sun Young Kwon, Hoon Joo Na, Hyeong Joon Kim |
p113 |
|
Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
Andrew J. Trunek, Philip G. Neudeck, David J. Spry |
p117 |
|
In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
Brian H. Ponczak, James D. Oliver, Soon Cho, Gary W. Rubloff |
p121 |
|
In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
Brenda L. VanMil, Kok Keong Lew, Rachael L. Myers-Ward, Ronald T. Holm, D. Kurt Gaskill, Charles R. Eddy |
p125 |
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Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
T. Hori, Katsunori Danno, Tsunenobu Kimoto |
p129 |
