The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method
Jae Woo Kim, Soo Hyung Seo, Kwan Mo Kim, Joon Suk Song, Tae Sung Kim, Myung Hwan Oh |
p91 |
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Polytype Control in 6H-SiC Grown via Sublimation Method
Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xua, Min Hua Jiang |
p95 |
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Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar |
p99 |
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Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals
Mark A. Fanton, Qiang Li, A.Y. Polyakov, R.L. Cavalero, R.G Ray, B.E. Weiland, Marek Skowronski |
p103 |
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SiC HTCVD Simulation Modified by Sublimation Etching
Yasuo Kito, Emi Makino, Kei Ikeda, Masao Nagakubo, Shoichi Onda |
p107 |
|
Gas Fed Top-Seeded Solution Growth of Silicon Carbide
Didier Chaussende, Michel Pons, Roland Madar |
p111 |
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Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima |
p115 |
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Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Nobuyoshi Yashiro, Akihiro Yauchi, Toru Ujihara, Kazuo Nakajima |
p119 |
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Growth of Cubic Silicon Carbide Crystals from Solution
Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Pierre Ferret, J. Pesenti, Alain Basset, Antoine Passero, Alkyoni Mantzari, Efstathios K. Polychroniadis, Carole Balloud, P. Soares, Jean Camassel |
p123 |
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Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling
Shinichi Nishizawa, Michel Pons |
p129 |
