Visible Light-Emitting Diodes - The Formative Years
J.W. Allen, Hermann G. Grimmeiss |
p1 |
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Perspective on the Development of III-Nitrides for Optical Emitters
Bo Monemar |
p17 |
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Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
Vitaly V. Kveder, Martin Kittler |
p29 |
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Dislocation Networks Formed by Silicon Wafer Direct Bonding
Manfred Reiche |
p57 |
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Si- and SiGe-Based LEDs
N.A. Sobolev |
p79 |
|
SOI-LEDs with Carrier Confinement
Tu Hoang, Jisk Holleman, Jurriaan Schmitz |
p101 |
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MOS Light Emitting Devices Based on Rare-Earth Ion Implantation
L. Rebohle, Wolfgang Skorupa |
p117 |
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Present Status of Deep UV Nitride Light Emitters
Asif Khan, Krishnan Balakrishnan |
p141 |
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AlN and AlGaN by MOVPE for UV Light Emitting Devices
Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki |
p175 |
|
Nonpolar and Semipolar Orientations: Material Growth and Properties
Hisashi Masui, Shuji Nakamura |
p211 |
