Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Taizo Hoshino, Hosei Hirano, Kohei Tatsumi |
p3 |
|
100 mm 4HN-SiC Wafers with Zero Micropipe Density
R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr. |
p7 |
|
Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
Erwin Schmitt, Thomas L. Straubinger, Michael Rasp, Michael Vogel, Andreas Wohlfart |
p11 |
|
Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions
Emil Tymicki, Krzysztof Grasza, Władysław Hofman, Ryszard Diduszko, Rafał Bożek |
p15 |
|
Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
Philip Hens, Ulrike Künecke, Peter J. Wellmann |
p19 |
|
Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
Octavian Filip, Boris M. Epelbaum, Juan Li, Matthias Bickermann, Xian Gang Xu, Albrecht Winnacker |
p23 |
|
Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace
Eugene Y. Tupitsyn, Alexander Galyukov, Maxim V. Bogdanov, Alexey Kulik, Mark S. Ramm, Yuri N. Makarov, Tangali S. Sudarshan |
p27 |
|
Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
Krzysztof Grasza, Emil Tymicki |
p31 |
|
Status of Large Diameter SiC Single Crystals at II-VI
Avinash K. Gupta, Ilya Zwieback, Andrew E. Souzis, Murugesu Yoganathan, Thomas Anderson |
p35 |
|
Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer
J. Chen, S.C. Lien, Y.C. Shin, Zhe Chuan Feng, C.H. Kuan, J.H. Zhao, J.H. Zhao, Wei Jie Lu |
p39 |
