Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
Hiroyuki Nagasawa, Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Masayuki Abe, Adolf Schöner, Mietek Bakowski, Per Ericsson, Gerhard Pensl |
p89 |
|
Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
Christian Hecht, Bernd Thomas, René A. Stein, Peter Friedrichs |
p95 |
|
Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
Joseph J. Sumakeris, Jason Henning, Michael J. O'Loughlin, Saptharishi Sriram, Vijay Balakrishna |
p99 |
|
High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
Jie Zhang, Janice Mazzola, Swapna G. Sunkari, Gray Stewart, Paul B. Klein, Rachael M. Ward, E.R. Glaser, Kok Keong Lew, D. Kurt Gaskill, Igor Sankin, Volodymyr Bondarenko, David Null, David C. Sheridan, Michael S. Mazzola |
p103 |
|
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
Stefano Leone, Henrik Pedersen, Anne Henry, Olof Kordina, Erik Janzén |
p107 |
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Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
Masahiko Ito, L. Storasta, Hidekazu Tsuchida |
p111 |
|
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, Vanya Darakchieva, Erik Janzén |
p115 |
|
Development of a Practical High-Rate CVD System
Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Kazuo Arai, Sadafumi Yoshida |
p119 |
|
SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa |
p123 |
|
Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via |
p127 |
