Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
Jessica Eid, Irina G. Galben-Sandulache, Georgios Zoulis, Teddy Robert, Didier Chaussende, Sandrine Juillaguet, Antoine Tiberj, Jean Camassel |
p45 |
|
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC
Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel |
p49 |
|
Thick Epitaxial Layers Growth by Chlorine Addition
Francesco La Via, Gaetano Izzo, Massimo Camarda, Giuseppe Abbondanza, Danilo Crippa |
p55 |
|
Basal Plane Dislocation Mitigation in 8º Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
Brenda L. VanMil, Robert E. Stahlbush, Rachael L. Myers-Ward, Yoosuf N. Picard, S.A. Kitt, J.M. McCrate, S.L. Katz, D. Kurt Gaskill, Charles R. Eddy |
p61 |
|
Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer
Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano |
p67 |
|
Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
Massimo Camarda, Antonino La Magna, Francesco La Via |
p73 |
|
Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with VBR > 4 kV
Bernd Thomas, Christian Hecht, Birgit Kallinger |
p77 |
|
Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates
Anne Henry, Stefano Leone, Henrik Pedersen, Olof Kordina, Erik Janzén |
p81 |
|
P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
Philip Hens, Mikael Syväjärvi, Felix Oehlschläger, Peter J. Wellmann, Rositza Yakimova |
p85 |
|
Chloride-Based SiC Epitaxial Growth
Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, A. Lundskog, Erik Janzén |
p89 |
