Surface Microroughness of Silicon in Wet Process and its Minimization
Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi
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p45 |
Oxidation of Si Surface Utilizing SCCO2
K. Saito, T. Kitajima, M. Kohno, I. Mizobata, T. Iwata, S. Hirae
|
p49 |
Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer
Kenichi Sano, Akira Izumi, Atsuro Eitoku, James Snow, L. Nyns, S. Kubicek, R. Singanamalla, O. Richard, Thierry Conard, Rita Vos, Paul W. Mertens
|
p53 |
Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD
Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park
|
p57 |
Etch Rate Profile Characterization of High-κ Materials
Annamaria Votta, Enrico Bellandi, Rosella Piagge, Massimo Caniatti, Francesco Pipia, Mauro Alessandri
|
p63 |
Critical Thickness Threshold in HfO2 Layers
Pascal Besson, Virginie Loup, Thierry Salvetat, Névine Rochat, Sandrine Lhostis, Sylvie Favier, Karen Dabertrand, Vincent Cosnier
|
p67 |
Surface Preparation Challenge on Nitrided Gate Oxides
Philippe Garnier, David Barge, Jerome Bienacel, Brice Tavel, Nicolas Cabuil, Didier Lévy, Kathy Barla
|
p71 |
Development of a New TaN Etchant for Metal Gate
Mong Sup Lee, Sang Yong Kim, Ji Hoon Cha, Jeong Nam Han, Im Soo Park, Kun Tack Lee, Chang Ki Hong, Han Ku Cho, Joo Tae Moon
|
p75 |
Peracetic Acid as Active Species in Mixtures for Selective Etching of SiGe/Si Layer Systems – Aspects of Chemistry and Analytics
Mathias Guder, Bernd O. Kolbesen, Cécile Delattre, C. Fischer, H. Schier, Gerald Wagner
|
p79 |
A Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium Layers
Laurent Souriau, V. Terzieva, Marc Meuris, Matty Caymax
|
p83 |