Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures
M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski |
p65 |
|
Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon
A.L. Quintos Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto-Kuwabara, L. Khomenkova, L.V. Shcherbyna |
p71 |
|
Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography
Nelly Burle, Bernard Pichaud, V.I. Vdovin, M.M. Rzaev |
p77 |
|
Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers
I.V. Antonova, M.B. Gulyaev, R.A. Soots, V.A. Seleznev, V.Ya. Prinz |
p83 |
|
Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
N.Yu. Arutyunov, Valentin V. Emtsev, E. Sayed, Reinhard Krause-Rehberg |
p89 |
|
Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p+/n Si1-XGex Source/Drain Junctions
M. Kamruzzaman Chowdhury, B. Vissouvanadin, Mireia Bargallo Gonzalez, N. Bhouri, Peter Verheyen, H. Hikavyy, O. Richard, J. Geypen, H. Bender, Roger Loo, C. Claeys, Eddy Simoen, V. Machkaoutsan, P. Tomasini, S.G Thomas, J.P. Lu, J.W. Weijtmans, R. Wise |
p95 |
|
Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
Marie-Laure David, Frédéric Pailloux, Michèl Drouet, Marie France Beaufort, Jean François Barbot, Eddy Simoen, C. Claeys |
p101 |
|
Co-Germanide Schottky Contacts on Ge
Luc Lajaunie, Marie-Laure David, K. Opsomer, Eddy Simoen, C. Claeys, Jean François Barbot |
p107 |
|
Internal Dissolution of Buried Oxide in SOI Wafers
Oleg Kononchuk, Francois Boedt, Frederic Allibert |
p113 |
|
Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs
H. Ohyama, K. Takakura, T. Nagano, M. Hanada, S. Kuboyama, Eddy Simoen, C. Claeys |
p119 |
